Справочник MOSFET. KP8N60D

 

KP8N60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KP8N60D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 73.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для KP8N60D

 

 

KP8N60D Datasheet (PDF)

 ..1. Size:385K  kec
 kp8n60d.pdf

KP8N60D KP8N60D

KP8N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N60DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio

 8.1. Size:382K  kec
 kp8n60f.pdf

KP8N60D KP8N60D

KP8N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

 8.2. Size:246K  inchange semiconductor
 kp8n60f.pdf

KP8N60D KP8N60D

isc N-Channel MOSFET Transistor KP8N60FFEATURESStatic drain-source on-resistance:RDS(on) 0.58Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for active power factor correction and switching modePower suppliesABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:386K  kec
 kp8n65d.pdf

KP8N60D KP8N60D

KP8N65D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N65DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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