All MOSFET. PHB37N06LT Datasheet

 

PHB37N06LT Datasheet and Replacement


   Type Designator: PHB37N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT404
 

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PHB37N06LT Datasheet (PDF)

 ..1. Size:78K  philips
 php37n06lt phb37n06lt phd37n06lt.pdf pdf_icon

PHB37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal

 6.1. Size:56K  philips
 phb37n06t 1.pdf pdf_icon

PHB37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB37N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 37 Atrench technology the devic

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