PHB37N06LT Specs and Replacement
Type Designator: PHB37N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT404
PHB37N06LT substitution
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PHB37N06LT datasheet
php37n06lt phb37n06lt phd37n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V) g Low thermal... See More ⇒
phb37n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB37N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 37 A trench technology the devic... See More ⇒
Detailed specifications: OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, IRFP250N, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT
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