PHB37N06LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB37N06LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 37
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOT404
PHB37N06LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB37N06LT
Datasheet (PDF)
..1. Size:78K philips
php37n06lt phb37n06lt phd37n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal
6.1. Size:56K philips
phb37n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB37N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 37 Atrench technology the devic
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