All MOSFET. KP980A Datasheet

 

KP980A Datasheet and Replacement


   Type Designator: KP980A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 11 pF
   Package: KT-55C-1
 

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KP980A Datasheet (PDF)

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KP980A

Syntez MicroelectronicsSILICON LDMOS POWER TRANSISTORKP980A7 W, up to 1000 MHz, Enhancement Mode________________________________________________The silicon LDMOS transistor die is designed for large-signal output and driver stages up to 860 MHzfrequency range. This transistor is typically used forconstruction of terminal cascades of power amplifiersor transmitter applications.

Datasheet: KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A , KP979B , KP979VC , 75N75 , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 , KPA1758 , KPA1764 , KPA1790 .

History: SQM40N10-30 | STC6602

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