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KP980A Specs and Replacement

Type Designator: KP980A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 11 pF

Package: KT-55C-1

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KP980A datasheet

 ..1. Size:96K  syntez microelectronics
 kp980a.pdf pdf_icon

KP980A

Syntez Microelectronics SILICON LDMOS POWER TRANSISTOR KP980A 7 W, up to 1000 MHz, Enhancement Mode ________________________________________________ The silicon LDMOS transistor die is designed for large- signal output and driver stages up to 860 MHz frequency range. This transistor is typically used for construction of terminal cascades of power amplifiers or transmitter applications.... See More ⇒

Detailed specifications: KP977AC, KP978A, KP978BC, KP978GC, KP978VC, KP979A, KP979B, KP979VC, 18N50, KP981A, KP981BC, KP981VC, KPA1716, KPA1750, KPA1758, KPA1764, KPA1790

Keywords - KP980A MOSFET specs

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