All MOSFET. KPA2790GR Datasheet

 

KPA2790GR MOSFET. Datasheet pdf. Equivalent


   Type Designator: KPA2790GR
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.6 nC
   trⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP-8

 KPA2790GR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KPA2790GR Datasheet (PDF)

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 kpa2790gr.pdf

KPA2790GR KPA2790GR

SMD Type ICSMD Type ICMOS Field Effect TransistorKPA2790GRFeaturesLow on-state resistanceN-channel RDS(on)1 =28 m MAX. (VGS =10 V, ID =3A)RDS(on)2 =40 m MAX. (VGS =4.5 V, ID =3 A)P-channel RDS(on)1 =60m MAX. (VGS =-10 V, ID =-3 A)RDS(on)2 =80 m MAX. (VGS =-4.5V, ID =-3A)Low input capacitanceN-channel Ciss = 500 pF TYP.P-channel Ciss = 460 pF TYP.Built-in gate protectio

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