All MOSFET. KPCF8402 Datasheet

 

KPCF8402 Datasheet and Replacement


   Type Designator: KPCF8402
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: CHIPFET
 

 KPCF8402 substitution

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KPCF8402 Datasheet (PDF)

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KPCF8402

SMD Type ICSMD Type ICSilicon P, N Channel MOS Type TransistorKPCF8402FeaturesLow drain-source ON resistance: P Channel RDS (ON) =60m (typ.)N Channel RDS (ON) =38 m (typ.)High forward transfer admittance: P Channel |Yfs| =5.9S(typ.)N Channel |Yfs| =6.8S(typ.)Low leakage current: P Channel IDSS =-10 A(VDS =-30 V)N Channel IDSS =10 A(VDS =30 V)Enhancement-mode: P Cha

Datasheet: KPA1790 , KPA1792 , KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , IRFZ46N , KQB12P20 , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 .

History: SCG3019 | IRFR9024TR | KF50N06P | KP981A | SGM0410S

Keywords - KPCF8402 MOSFET datasheet

 KPCF8402 cross reference
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