KQB27P06 PDF and Equivalents Search

 

KQB27P06 Specs and Replacement


   Type Designator: KQB27P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-263
 

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KQB27P06 datasheet

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 kqb27p06.pdf pdf_icon

KQB27P06

SMD Type IC SMD Type Transistors 60V P-Channel MOSFET KQB27P06 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -27A, -60V, RDS(on) =0.07 @VGS =-10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested Improved dv/dt capability 0.81+0.1 -0.1 2.54 175 maximum junction temperature rating 1gate 1Gate 2.54... See More ⇒

Detailed specifications: KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , KQB12P20 , IRLB3034 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , KQB4P40 .

Keywords - KQB27P06 MOSFET specs

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