All MOSFET. KQB27P06 Datasheet

 

KQB27P06 Datasheet and Replacement


   Type Designator: KQB27P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-263
 

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KQB27P06 Datasheet (PDF)

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KQB27P06

SMD Type ICSMD Type Transistors60V P-Channel MOSFETKQB27P06TO-263Unit: mmFeatures 4.57+0.2-0.2+0.11.27-0.1-27A, -60V, RDS(on) =0.07 @VGS =-10 VLow gate charge ( typical 33 nC)Low Crss ( typical 120pF)Fast switching+0.10.1max1.27-0.1100% avalanche testedImproved dv/dt capability0.81+0.1-0.12.54175 maximum junction temperature rating1gate1Gate2.54

Datasheet: KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , KQB12P20 , EMB04N03H , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , KQB4P40 .

History: STP4N80XI

Keywords - KQB27P06 MOSFET datasheet

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