All MOSFET. KQB27P06 Datasheet

 

KQB27P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: KQB27P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 33 nC

Rise Time (tr): 185 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO-263

KQB27P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KQB27P06 Datasheet (PDF)

1.1. kqb27p06.pdf Size:64K _update_mosfet

KQB27P06
KQB27P06

SMD Type IC SMD Type Transistors 60V P-Channel MOSFET KQB27P06 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -27A, -60V, RDS(on) =0.07 @VGS =-10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested Improved dv/dt capability 0.81+0.1 -0.1 2.54 175 maximum junction temperature rating 1gate 1Gate 2.54

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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