All MOSFET. KQB27P06 Datasheet

 

KQB27P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: KQB27P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 33 nC

Rise Time (tr): 185 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO-263

KQB27P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KQB27P06 Datasheet (PDF)

1.1. kqb27p06.pdf Size:64K _update_mosfet

KQB27P06
KQB27P06

SMD Type IC SMD Type Transistors 60V P-Channel MOSFET KQB27P06 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -27A, -60V, RDS(on) =0.07 @VGS =-10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested Improved dv/dt capability 0.81+0.1 -0.1 2.54 175 maximum junction temperature rating 1gate 1Gate 2.54

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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