KQB4N50 MOSFET Datasheet: N-Ch, 500V, 3.4A. Full specification with pinout and replacement list

KQB4N50 Specs and Replacement

Type Designator: KQB4N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO-263

KQB4N50 substitution

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KQB4N50 datasheet

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SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB4N50 TO-263 Unit mm 4.57+0.2 -0.2 Features +0.1 1.27-0.1 3.4A, 500 V. RDS(ON) =2.7 @VGS =10V Low gate charge (typical 10nC) Low Crss(typical 6.0pF) +0.1 Fast switching 0.1max 1.27-0.1 100% avalanche tested 0.81+0.1 -0.1 lmproved dv/dt capability 2.54 1gate 1Ga... See More ⇒

Detailed specifications: KQB12P20, KQB27P06, KQB2N30, KQB2N50, KQB2N60, KQB2N80, KQB3N30, KQB3N40, MMIS60R580P, KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50