All MOSFET. KQB4N50 Datasheet

 

KQB4N50 Datasheet and Replacement


   Type Designator: KQB4N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-263
 

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KQB4N50 Datasheet (PDF)

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KQB4N50

SMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB4N50TO-263Unit: mm4.57+0.2-0.2Features +0.11.27-0.13.4A, 500 V. RDS(ON) =2.7 @VGS =10VLow gate charge (typical 10nC)Low Crss(typical 6.0pF)+0.1Fast switching 0.1max1.27-0.1100% avalanche tested0.81+0.1-0.1lmproved dv/dt capability2.541gate1Ga

Datasheet: KQB12P20 , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , 2N7002 , KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 .

History: CEB6086 | AP60WN2K3H

Keywords - KQB4N50 MOSFET datasheet

 KQB4N50 cross reference
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