KQB4N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: KQB4N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO-263
KQB4N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KQB4N50 Datasheet (PDF)
..1. Size:149K tysemi
kqb4n50.pdf
kqb4n50.pdf
SMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB4N50TO-263Unit: mm4.57+0.2-0.2Features +0.11.27-0.13.4A, 500 V. RDS(ON) =2.7 @VGS =10VLow gate charge (typical 10nC)Low Crss(typical 6.0pF)+0.1Fast switching 0.1max1.27-0.1100% avalanche tested0.81+0.1-0.1lmproved dv/dt capability2.541gate1Ga
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
