KQB4P40 PDF and Equivalents Search

 

KQB4P40 Specs and Replacement

Type Designator: KQB4P40

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm

Package: TO-263

KQB4P40 substitution

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KQB4P40 datasheet

 ..1. Size:171K  tysemi
 kqb4p40.pdf pdf_icon

KQB4P40

SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type Transistors Product specification KQB4P40 TO-263 Unit mm 4.57+0.2 -0.2 +0.1 1.27-0.1 Features 3.5A, -400V, RDS(on) =3.1 @VGS =-10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) +0.1 0.1max 1.27-0.1 Fast switching 100% avalanche tested 0.81+0.1 -0.1 Improved dv/dt c... See More ⇒

Detailed specifications: KQB27P06, KQB2N30, KQB2N50, KQB2N60, KQB2N80, KQB3N30, KQB3N40, KQB4N50, AOD4184A, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50

Keywords - KQB4P40 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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