All MOSFET. KQB4P40 Datasheet

 

KQB4P40 Datasheet and Replacement


   Type Designator: KQB4P40
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: TO-263
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KQB4P40 Datasheet (PDF)

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KQB4P40

SMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type TransistorsProduct specificationKQB4P40TO-263Unit: mm4.57+0.2-0.2+0.11.27-0.1Features3.5A, -400V, RDS(on) =3.1 @VGS =-10 VLow gate charge ( typical 18 nC)Low Crss ( typical 11 pF)+0.10.1max1.27-0.1Fast switching100% avalanche tested0.81+0.1-0.1Improved dv/dt c

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: WML80R350S | PDS3807 | SSM3K302T | AFN1932 | FDP79N15 | IRF6215SPBF

Keywords - KQB4P40 MOSFET datasheet

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