All MOSFET. KQB4P40 Datasheet

 

KQB4P40 Datasheet and Replacement


   Type Designator: KQB4P40
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: TO-263
 

 KQB4P40 substitution

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KQB4P40 Datasheet (PDF)

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KQB4P40

SMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type TransistorsProduct specificationKQB4P40TO-263Unit: mm4.57+0.2-0.2+0.11.27-0.1Features3.5A, -400V, RDS(on) =3.1 @VGS =-10 VLow gate charge ( typical 18 nC)Low Crss ( typical 11 pF)+0.10.1max1.27-0.1Fast switching100% avalanche tested0.81+0.1-0.1Improved dv/dt c

Datasheet: KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , HY1906P , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 , KQD3P50 .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

Keywords - KQB4P40 MOSFET datasheet

 KQB4P40 cross reference
 KQB4P40 equivalent finder
 KQB4P40 lookup
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