All MOSFET. KQB5N60 Datasheet

 

KQB5N60 Datasheet and Replacement


   Type Designator: KQB5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-263
 

 KQB5N60 substitution

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KQB5N60 Datasheet (PDF)

 ..1. Size:185K  tysemi
 kqb5n60.pdf pdf_icon

KQB5N60

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB5N60TO-263Unit: mmFeatures4.57+0.2-0.2+0.15.0A, 600 V. RDS(ON) =2.0 @VGS =10V1.27-0.1Low gate charge (typical 16nC)Low Crss(typical 9.0pF)Fast switching+0.10.1max100% avalanche teste

 9.1. Size:167K  tysemi
 kqb5n20.pdf pdf_icon

KQB5N60

SMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB5N20TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.14.5A, 200 V. RDS(ON) =1.2 @VGS =10VLow gate charge (typical 6.0nC)Low Crss(typical 6.0pF)Fast switching+0.10.1max1.27-0.1100% avalanche testedlmproved dv/dt capabi

Datasheet: KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , KQB4P40 , KQB5N20 , AO4468 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 , KQD3P50 , KQD5P10 , KQS4900 .

History: OSG80R650PF | KU310N10F | 6N60KG-TF2-T | SSM3K335R | APT47N60BCFG | CS6N90F | CS50N06P

Keywords - KQB5N60 MOSFET datasheet

 KQB5N60 cross reference
 KQB5N60 equivalent finder
 KQB5N60 lookup
 KQB5N60 substitution
 KQB5N60 replacement

 

 
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