KQB5N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: KQB5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO-263
KQB5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KQB5N60 Datasheet (PDF)
kqb5n60.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB5N60TO-263Unit: mmFeatures4.57+0.2-0.2+0.15.0A, 600 V. RDS(ON) =2.0 @VGS =10V1.27-0.1Low gate charge (typical 16nC)Low Crss(typical 9.0pF)Fast switching+0.10.1max100% avalanche teste
kqb5n20.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB5N20TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.14.5A, 200 V. RDS(ON) =1.2 @VGS =10VLow gate charge (typical 6.0nC)Low Crss(typical 6.0pF)Fast switching+0.10.1max1.27-0.1100% avalanche testedlmproved dv/dt capabi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
