KQB5N60 PDF and Equivalents Search

 

KQB5N60 Specs and Replacement

Type Designator: KQB5N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-263

KQB5N60 substitution

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KQB5N60 datasheet

 ..1. Size:185K  tysemi
 kqb5n60.pdf pdf_icon

KQB5N60

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N60 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 5.0A, 600 V. RDS(ON) =2.0 @VGS =10V 1.27-0.1 Low gate charge (typical 16nC) Low Crss(typical 9.0pF) Fast switching +0.1 0.1max 100% avalanche teste... See More ⇒

 9.1. Size:167K  tysemi
 kqb5n20.pdf pdf_icon

KQB5N60

SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N20 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 4.5A, 200 V. RDS(ON) =1.2 @VGS =10V Low gate charge (typical 6.0nC) Low Crss(typical 6.0pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested lmproved dv/dt capabi... See More ⇒

Detailed specifications: KQB2N50, KQB2N60, KQB2N80, KQB3N30, KQB3N40, KQB4N50, KQB4P40, KQB5N20, 60N06, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10, KQS4900

Keywords - KQB5N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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