KQB630 PDF and Equivalents Search

 

KQB630 Specs and Replacement

Type Designator: KQB630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-263

KQB630 substitution

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KQB630 datasheet

 ..1. Size:113K  tysemi
 kqb630.pdf pdf_icon

KQB630

SMD Type IC SMD Type Transistors Product specification KQB630 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 9A, 200 V. RDS(ON) =0.4 @VGS =10 V Low gate charge (typical 19nC) Low Crss(typical 35pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.08-0.1 0.4-0.2 2drain 2... See More ⇒

Detailed specifications: KQB2N60, KQB2N80, KQB3N30, KQB3N40, KQB4N50, KQB4P40, KQB5N20, KQB5N60, IRFP064N, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10, KQS4900, KQS4901

Keywords - KQB630 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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