All MOSFET. KQB630 Datasheet

 

KQB630 Datasheet and Replacement


   Type Designator: KQB630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-263
 

 KQB630 substitution

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KQB630 Datasheet (PDF)

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KQB630

SMD Type ICSMD Type TransistorsProduct specificationKQB630TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.19A, 200 V. RDS(ON) =0.4 @VGS =10 VLow gate charge (typical 19nC)Low Crss(typical 35pF)Fast switching+0.10.1max1.27-0.1100% avalanche testedlmproved dv/dt capability0.81+0.1-0.12.541gate1Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22drain2

Datasheet: KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , KQB4P40 , KQB5N20 , KQB5N60 , 5N50 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 , KQD3P50 , KQD5P10 , KQS4900 , KQS4901 .

History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ

Keywords - KQB630 MOSFET datasheet

 KQB630 cross reference
 KQB630 equivalent finder
 KQB630 lookup
 KQB630 substitution
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