KQB6N25 PDF and Equivalents Search

 

KQB6N25 Specs and Replacement

Type Designator: KQB6N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-263

KQB6N25 substitution

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KQB6N25 datasheet

 ..1. Size:203K  tysemi
 kqb6n25.pdf pdf_icon

KQB6N25

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB6N25 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 5.5A, 500 V. RDS(ON) =1 @VGS =10 V Low gate charge (typical 6.6nC) Low Crss(typical 7.5pF) Fast switching ... See More ⇒

 9.1. Size:221K  tysemi
 kqb6n70.pdf pdf_icon

KQB6N25

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB6N70 TO-263 Unit mm Features 4.57+0.2 6.2A, 700 V. RDS(ON) =1.5 @VGS =10V -0.2 +0.1 1.27-0.1 Low... See More ⇒

Detailed specifications: KQB2N80, KQB3N30, KQB3N40, KQB4N50, KQB4P40, KQB5N20, KQB5N60, KQB630, AO4468, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10, KQS4900, KQS4901, KRF1302S

Keywords - KQB6N25 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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