All MOSFET. KQB6N25 Datasheet

 

KQB6N25 Datasheet and Replacement


   Type Designator: KQB6N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-263
 

 KQB6N25 substitution

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KQB6N25 Datasheet (PDF)

 ..1. Size:203K  tysemi
 kqb6n25.pdf pdf_icon

KQB6N25

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB6N25TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.15.5A, 500 V. RDS(ON) =1 @VGS =10 VLow gate charge (typical 6.6nC)Low Crss(typical 7.5pF)Fast switching

 9.1. Size:221K  tysemi
 kqb6n70.pdf pdf_icon

KQB6N25

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB6N70TO-263Unit: mmFeatures4.57+0.26.2A, 700 V. RDS(ON) =1.5 @VGS =10V -0.2+0.11.27-0.1Low

Datasheet: KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 , KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , IRFP064N , KQB6N70 , KQB9N50 , KQD1P50 , KQD3P50 , KQD5P10 , KQS4900 , KQS4901 , KRF1302S .

History: SSM3K04FS | P2610BT | DMN3035LWN | AO6411 | AOD603A | IPB34CN10N | FQD2N50TF

Keywords - KQB6N25 MOSFET datasheet

 KQB6N25 cross reference
 KQB6N25 equivalent finder
 KQB6N25 lookup
 KQB6N25 substitution
 KQB6N25 replacement

 

 
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