PHB42N03LT Specs and Replacement

Type Designator: PHB42N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT404

PHB42N03LT substitution

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PHB42N03LT datasheet

 ..1. Size:49K  philips
 phb42n03lt.pdf pdf_icon

PHB42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB42N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 42 A Stable off-state characteristics High thermal cycling performance RDS(ON) 26 m (VGS = 5 V) g Low thermal resistance Surface ... See More ⇒

 6.1. Size:53K  philips
 phb42n03t 1.pdf pdf_icon

PHB42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB42N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 42 A trench technology. The devic... See More ⇒

Detailed specifications: PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, 2SK3878, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, PHB65N06LT

Keywords - PHB42N03LT MOSFET specs

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