PHB42N03LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB42N03LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 86
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
SOT404
PHB42N03LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB42N03LT
Datasheet (PDF)
..1. Size:49K philips
phb42n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB42N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 42 A Stable off-state characteristics High thermal cycling performance RDS(ON) 26 m (VGS = 5 V)g Low thermal resistance Surface
6.1. Size:53K philips
phb42n03t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB42N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 42 Atrench technology. The devic
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