All MOSFET. PHB42N03LT Datasheet

 

PHB42N03LT Datasheet and Replacement


   Type Designator: PHB42N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT404
 

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PHB42N03LT Datasheet (PDF)

 ..1. Size:49K  philips
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PHB42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB42N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 42 A Stable off-state characteristics High thermal cycling performance RDS(ON) 26 m (VGS = 5 V)g Low thermal resistance Surface

 6.1. Size:53K  philips
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PHB42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB42N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 42 Atrench technology. The devic

Datasheet: PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , 8205A , PHB44N06LT , PHB45N03LT , PHB4N60E , PHB50N03LT , PHB50N06LT , PHB55N03LT , PHB60N06LT , PHB65N06LT .

History: LSC60R105HF | LSC60R125HT

Keywords - PHB42N03LT MOSFET datasheet

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