Philips Semiconductors Product specification TrenchMOS transistor PHB42N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 42 A Stable off-state characteristics High thermal cycling performance RDS(ON) 26 m (VGS = 5 V)g Low thermal resistance Surface

Philips Semiconductors Product specification TrenchMOS transistor PHB42N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 42 Atrench technology. The devic