KQB9N50 PDF and Equivalents Search

 

KQB9N50 Specs and Replacement

Type Designator: KQB9N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO-263

KQB9N50 substitution

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KQB9N50 datasheet

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KQB9N50

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB9N50 TO-263 Unit mm 4.57+0.2 Features -0.2 +0.1 1.27-0.1 9A, 500 V. RDS(ON) =0.73 @VGS =10 V Low... See More ⇒

Detailed specifications: KQB3N40, KQB4N50, KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, IRFZ44N, KQD1P50, KQD3P50, KQD5P10, KQS4900, KQS4901, KRF1302S, KRF2805S, KRF4905S

Keywords - KQB9N50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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