All MOSFET. KQB9N50 Datasheet

 

KQB9N50 Datasheet and Replacement


   Type Designator: KQB9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-263
 

 KQB9N50 substitution

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KQB9N50 Datasheet (PDF)

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KQB9N50

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB9N50TO-263Unit: mm4.57+0.2Features -0.2+0.11.27-0.19A, 500 V. RDS(ON) =0.73 @VGS =10 VLow

Datasheet: KQB3N40 , KQB4N50 , KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , IRFZ44N , KQD1P50 , KQD3P50 , KQD5P10 , KQS4900 , KQS4901 , KRF1302S , KRF2805S , KRF4905S .

Keywords - KQB9N50 MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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