KQD1P50 Specs and Replacement
Type Designator: KQD1P50
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
Package: TO-252
KQD1P50 substitution
- MOSFET ⓘ Cross-Reference Search
KQD1P50 datasheet
kqd1p50.pdf
SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type Transistors Product specification KQD1P50 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 -1.2A, -500V, RDS(on) = 10.5 @VGS =-10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) 0.127 0.80+0.1 max Fast switching -0.1 100% avalanche tested Improved d... See More ⇒
Detailed specifications: KQB4N50, KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, IRF3205, KQD3P50, KQD5P10, KQS4900, KQS4901, KRF1302S, KRF2805S, KRF4905S, KRF7104
Keywords - KQD1P50 MOSFET specs
KQD1P50 cross reference
KQD1P50 equivalent finder
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KQD1P50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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