All MOSFET. KQD1P50 Datasheet

 

KQD1P50 Datasheet and Replacement


   Type Designator: KQD1P50
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: TO-252
 

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KQD1P50 Datasheet (PDF)

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KQD1P50

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type TransistorsProduct specificationKQD1P50TO-252Unit: mmFeatures6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7-1.2A, -500V, RDS(on) = 10.5 @VGS =-10 VLow gate charge ( typical 11 nC)Low Crss ( typical 6.0 pF)0.1270.80+0.1 maxFast switching -0.1100% avalanche testedImproved d

Datasheet: KQB4N50 , KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , IRF3205 , KQD3P50 , KQD5P10 , KQS4900 , KQS4901 , KRF1302S , KRF2805S , KRF4905S , KRF7104 .

History: NTF3055L175T1G | HY3N80T | RJK03E9DPA | HAT1146C | SSM6J410TU | PE597BA | SQ2308BES

Keywords - KQD1P50 MOSFET datasheet

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