KQD3P50 PDF and Equivalents Search

 

KQD3P50 Specs and Replacement

Type Designator: KQD3P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: TO-252

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KQD3P50 datasheet

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KQD3P50

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors Product specification KQD3P50 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 -1.2A, -500V, RDS(on) =4.9 @VGS =-10 V Low gate charge ( typical 18 nC) Low Crss ( typical9.5 pF) 0.127 0.80+0.1 max ... See More ⇒

Detailed specifications: KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, IRF740, KQD5P10, KQS4900, KQS4901, KRF1302S, KRF2805S, KRF4905S, KRF7104, KRF7105

Keywords - KQD3P50 MOSFET specs

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