KQD3P50 Datasheet and Replacement
Type Designator: KQD3P50
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
Package: TO-252
KQD3P50 substitution
KQD3P50 Datasheet (PDF)
kqd3p50.pdf

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsProduct specificationKQD3P50TO-252Unit: mmFeatures6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7-1.2A, -500V, RDS(on) =4.9 @VGS =-10 VLow gate charge ( typical 18 nC)Low Crss ( typical9.5 pF)0.1270.80+0.1 max
Datasheet: KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 , IRF740 , KQD5P10 , KQS4900 , KQS4901 , KRF1302S , KRF2805S , KRF4905S , KRF7104 , KRF7105 .
History: CEM4946 | 2SK3524-01 | IRFP9140N | LNF7N65D | AONS66923 | SIR626DP | RSM002N06
Keywords - KQD3P50 MOSFET datasheet
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History: CEM4946 | 2SK3524-01 | IRFP9140N | LNF7N65D | AONS66923 | SIR626DP | RSM002N06



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