KQD5P10 PDF and Equivalents Search

 

KQD5P10 Specs and Replacement

Type Designator: KQD5P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO-252

KQD5P10 substitution

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KQD5P10 datasheet

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 kqd5p10.pdf pdf_icon

KQD5P10

SMD Type IC SMD Type Transistors 100V P-Channel MOSFET KQD5P10 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 -3.6A, -100V, RDS(on) =1.05 @VGS =-10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) 0.127 0.80+0.1 max -0.1 Fast switching 100% avalanche tested 1. Gate 2.3 0.60+0.1 -0.1 Improved dv/dt capability 4.60+0.15 -0.1... See More ⇒

Detailed specifications: KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, IRF840, KQS4900, KQS4901, KRF1302S, KRF2805S, KRF4905S, KRF7104, KRF7105, KRF7204

Keywords - KQD5P10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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