KQS4900 PDF and Equivalents Search

 

KQS4900 Specs and Replacement

Type Designator: KQS4900

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: SOP-8

KQS4900 substitution

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KQS4900 datasheet

 ..1. Size:58K  renesas
 kqs4900.pdf pdf_icon

KQS4900

SMD Type IC SMD Type IC Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS(ON) =0.55 @VGS =10V RDS(ON) =0.65 @VGS =5V P-Channel -0.3 A, -300V RDS(ON) =15.5 @VGS =- 10V RDS(ON) =16 @VGS =-5V Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC) Fast switching Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symb... See More ⇒

 8.1. Size:173K  tysemi
 kqs4901.pdf pdf_icon

KQS4900

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC Product specification KQS4901 Features 0.45 A, 400 V. RDS(ON) =4.2 @VGS =10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symbol... See More ⇒

Detailed specifications: KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10, 20N60, KQS4901, KRF1302S, KRF2805S, KRF4905S, KRF7104, KRF7105, KRF7204, KRF7205

Keywords - KQS4900 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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