All MOSFET. KQS4900 Datasheet

 

KQS4900 Datasheet and Replacement


   Type Designator: KQS4900
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOP-8
 

 KQS4900 substitution

   - MOSFET ⓘ Cross-Reference Search

 

KQS4900 Datasheet (PDF)

 ..1. Size:58K  renesas
 kqs4900.pdf pdf_icon

KQS4900

SMD Type ICSMD Type ICDual N & P-Channel, Logic Level MOSFETKQS4900FeaturesN-Channel1.3 A, 60 V RDS(ON) =0.55 @VGS =10VRDS(ON) =0.65 @VGS =5VP-Channel-0.3 A, -300V RDS(ON) =15.5 @VGS =- 10VRDS(ON) =16 @VGS =-5VLow gate charge ( typical N-Channel 1.6 nC)( typical P-Channel 3.6 nC)Fast switchingImproved dv/dt capabilityAbsolute Maximum Ratings Ta = 25Parameter Symb

 8.1. Size:173K  tysemi
 kqs4901.pdf pdf_icon

KQS4900

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKQS4901Features0.45 A, 400 V. RDS(ON) =4.2 @VGS =10 VLow gate charge (typical 5.8nC)Low Crss (typical 5.0 Pf)Fast switching speedlmproved dv/dt capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol

Datasheet: KQB5N60 , KQB630 , KQB6N25 , KQB6N70 , KQB9N50 , KQD1P50 , KQD3P50 , KQD5P10 , 20N60 , KQS4901 , KRF1302S , KRF2805S , KRF4905S , KRF7104 , KRF7105 , KRF7204 , KRF7205 .

History: DMP1022UFDE | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - KQS4900 MOSFET datasheet

 KQS4900 cross reference
 KQS4900 equivalent finder
 KQS4900 lookup
 KQS4900 substitution
 KQS4900 replacement

 

 
Back to Top

 


 
.