KQS4901 PDF and Equivalents Search

 

KQS4901 Specs and Replacement

Type Designator: KQS4901

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: SOP-8

KQS4901 substitution

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KQS4901 datasheet

 ..1. Size:173K  tysemi
kqs4901.pdf pdf_icon

KQS4901

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC Product specification KQS4901 Features 0.45 A, 400 V. RDS(ON) =4.2 @VGS =10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symbol... See More ⇒

 8.1. Size:58K  renesas
kqs4900.pdf pdf_icon

KQS4901

SMD Type IC SMD Type IC Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS(ON) =0.55 @VGS =10V RDS(ON) =0.65 @VGS =5V P-Channel -0.3 A, -300V RDS(ON) =15.5 @VGS =- 10V RDS(ON) =16 @VGS =-5V Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC) Fast switching Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symb... See More ⇒

Detailed specifications: KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10, KQS4900, IRF540N, KRF1302S, KRF2805S, KRF4905S, KRF7104, KRF7105, KRF7204, KRF7205, KRF7220

Keywords - KQS4901 MOSFET specs

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