KRF8910 Specs and Replacement

Type Designator: KRF8910

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0134 Ohm

Package: SOP-8

KRF8910 substitution

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KRF8910 datasheet

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 krf8910.pdf pdf_icon

KRF8910

SMD Type IC SMD Type IC HEXFET Power MOSFET KRF8910 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS 20 Continuous Drain Current, VGS @ 10V Ta = 25 ID 10 Continuous Drain Current,VGS @ 10V TC =70 ID 8.3 A Pulsed Drain Current *1 IDM 82 Maximum Power Dissipation Ta = 25 2 PD W Maximum Power Dissipation... See More ⇒

Detailed specifications: KRF7606, KRF7607, KRF7663, KRF7703, KRF7706, KRF7750, KRF7756, KRF7805Z, IRF530, KRF9610S, KRF9640S, KRF9952, KRFR6215, KRFR9210, KRFR9310, KRLML0100, KRLML2502

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