All MOSFET. KTHC5513 Datasheet

 

KTHC5513 Datasheet and Replacement


   Type Designator: KTHC5513
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: CHIPFET
 

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KTHC5513 Datasheet (PDF)

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KTHC5513

SMD Type ICSMD Type ICPower MOSFETKTHC5513FeaturesComplementary N-Channel and P-Channel MOSFETLeadless SMD Package Featuring Complementary PairLow RDS(on) in a ChipFET Package for High Efficiency PerformanceLow Profile ( 1.10 mm) Allows Placement in Extremely ThinEnvironments Such as Portable ElectronicsAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel U

Datasheet: KRLML6402 , KSO200P03S , KSP230 , KSP92 , KSS138 , KSS84 , KTD2005 , KTD2017 , 7N60 , KTHD3100C , KTK7132E , KTS1C1S250 , KTS3C3F30L , KU310N10F , KU3600N10W , KUK108-50DL , KUK109-50DL .

History: SPC4516 | PJP1NA80 | BSZ009NE2LS5 | IRF520N | RJL5014DPK | RJJ0601JPN | FDMS8025S

Keywords - KTHC5513 MOSFET datasheet

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