KTHC5513 Specs and Replacement

Type Designator: KTHC5513

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: CHIPFET

KTHC5513 substitution

- MOSFET ⓘ Cross-Reference Search

 

KTHC5513 datasheet

 ..1. Size:73K  kexin
 kthc5513.pdf pdf_icon

KTHC5513

SMD Type IC SMD Type IC Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS(on) in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel U... See More ⇒

Detailed specifications: KRLML6402, KSO200P03S, KSP230, KSP92, KSS138, KSS84, KTD2005, KTD2017, AO3407, KTHD3100C, KTK7132E, KTS1C1S250, KTS3C3F30L, KU310N10F, KU3600N10W, KUK108-50DL, KUK109-50DL

Keywords - KTHC5513 MOSFET specs

 KTHC5513 cross reference

 KTHC5513 equivalent finder

 KTHC5513 pdf lookup

 KTHC5513 substitution

 KTHC5513 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.