All MOSFET. KTHD3100C Datasheet

 

KTHD3100C Datasheet and Replacement


   Type Designator: KTHD3100C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: CHIPFET
 

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KTHD3100C Datasheet (PDF)

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KTHD3100C

SMD Type ICSMD Type ICPower MOSFETKTHD3100CFeaturesComplementary N-Channel and P-Channel MOSFETLeadless SMD Package Provides Great Thermal CharacteristicsTrench P-Channel for Low On ResistanceLow Gate Charge N-Channel for Test SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-source voltage VDSS 20 VGate-source voltage VGSS 12 8.0 V

Datasheet: KSO200P03S , KSP230 , KSP92 , KSS138 , KSS84 , KTD2005 , KTD2017 , KTHC5513 , 75N75 , KTK7132E , KTS1C1S250 , KTS3C3F30L , KU310N10F , KU3600N10W , KUK108-50DL , KUK109-50DL , KUK110-50GL .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - KTHD3100C MOSFET datasheet

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