KTHD3100C Specs and Replacement

Type Designator: KTHD3100C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: CHIPFET

KTHD3100C substitution

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KTHD3100C datasheet

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KTHD3100C

SMD Type IC SMD Type IC Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 8.0 V ... See More ⇒

Detailed specifications: KSO200P03S, KSP230, KSP92, KSS138, KSS84, KTD2005, KTD2017, KTHC5513, 18N50, KTK7132E, KTS1C1S250, KTS3C3F30L, KU310N10F, KU3600N10W, KUK108-50DL, KUK109-50DL, KUK110-50GL

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.