KTK7132E Specs and Replacement
Type Designator: KTK7132E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: TES6
KTK7132E substitution
- MOSFET ⓘ Cross-Reference Search
KTK7132E datasheet
ktk7132e.pdf
KTK7132E SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage Vth=0.5 1.5V. High Speed. Small Package. Enhancement-Mode. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Vol... See More ⇒
Detailed specifications: KSP230, KSP92, KSS138, KSS84, KTD2005, KTD2017, KTHC5513, KTHD3100C, 20N50, KTS1C1S250, KTS3C3F30L, KU310N10F, KU3600N10W, KUK108-50DL, KUK109-50DL, KUK110-50GL, KUK114-50L
Keywords - KTK7132E MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AGM307MNQ | BRCS080N10SHZC
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