PHB60N06LT Datasheet and Replacement
Type Designator: PHB60N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT404
PHB60N06LT substitution
PHB60N06LT Datasheet (PDF)
php60n06lt phb60n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance
phb60n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB60N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 58 Atrench technology the devic
Datasheet: PHB3N60E , PHB42N03LT , PHB44N06LT , PHB45N03LT , PHB4N60E , PHB50N03LT , PHB50N06LT , PHB55N03LT , SPP20N60C3 , PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT .
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History: FDB3860 | 3SK15A
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