PHB60N06LT Specs and Replacement

Type Designator: PHB60N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT404

PHB60N06LT substitution

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PHB60N06LT datasheet

 ..1. Size:70K  philips
 php60n06lt phb60n06lt.pdf pdf_icon

PHB60N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 6.1. Size:55K  philips
 phb60n06t 1.pdf pdf_icon

PHB60N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB60N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 58 A trench technology the devic... See More ⇒

Detailed specifications: PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT, PHB55N03LT, K3569, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT

Keywords - PHB60N06LT MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs