All MOSFET. PHB60N06LT Datasheet

 

PHB60N06LT Datasheet and Replacement


   Type Designator: PHB60N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT404
 

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PHB60N06LT Datasheet (PDF)

 ..1. Size:70K  philips
 php60n06lt phb60n06lt.pdf pdf_icon

PHB60N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:55K  philips
 phb60n06t 1.pdf pdf_icon

PHB60N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB60N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 58 Atrench technology the devic

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