All MOSFET. KTS1C1S250 Datasheet

 

KTS1C1S250 Datasheet and Replacement


   Type Designator: KTS1C1S250
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOP-8
 

 KTS1C1S250 substitution

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KTS1C1S250 Datasheet (PDF)

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KTS1C1S250

SMD Type ICSMD Type ICMesh Overlay Power MOSFETKTS1C1S250FeaturesTypical RDS(on) (N-Channel)=0.9Typical RDS(on) (N-Channel)=2.1Gate-source zener diodeStandard outline for easyautomated surface mount assemblyAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage (VGS =0) VDS 250 250VDrain-gate Voltage (RGS =20 k ) VDGR 250 250G

Datasheet: KSP92 , KSS138 , KSS84 , KTD2005 , KTD2017 , KTHC5513 , KTHD3100C , KTK7132E , CS150N03A8 , KTS3C3F30L , KU310N10F , KU3600N10W , KUK108-50DL , KUK109-50DL , KUK110-50GL , KUK114-50L , KUK128-50DL .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - KTS1C1S250 MOSFET datasheet

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