KTS1C1S250 Specs and Replacement

Type Designator: KTS1C1S250

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOP-8

KTS1C1S250 substitution

- MOSFET ⓘ Cross-Reference Search

 

KTS1C1S250 datasheet

 ..1. Size:60K  kexin
 kts1c1s250.pdf pdf_icon

KTS1C1S250

SMD Type IC SMD Type IC Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage (VGS =0) VDS 250 250 V Drain-gate Voltage (RGS =20 k ) VDGR 250 250 G... See More ⇒

Detailed specifications: KSP92, KSS138, KSS84, KTD2005, KTD2017, KTHC5513, KTHD3100C, KTK7132E, IRF520, KTS3C3F30L, KU310N10F, KU3600N10W, KUK108-50DL, KUK109-50DL, KUK110-50GL, KUK114-50L, KUK128-50DL

Keywords - KTS1C1S250 MOSFET specs

 KTS1C1S250 cross reference

 KTS1C1S250 equivalent finder

 KTS1C1S250 pdf lookup

 KTS1C1S250 substitution

 KTS1C1S250 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility