KTS3C3F30L Specs and Replacement

Type Designator: KTS3C3F30L

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOP-8

KTS3C3F30L substitution

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KTS3C3F30L datasheet

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KTS3C3F30L

SMD Type IC SMD Type IC TM STripFET Power MOSFET KTS3C3F30L Features Typical RDS(on) (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Standard outline for easy automated surface mount assembly Low threshold drive Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage (VGS =0) VDS 30 V Drain-gate Voltage (RGS =20k ) VDGR 30 Gate-to-Source ... See More ⇒

Detailed specifications: KSS138, KSS84, KTD2005, KTD2017, KTHC5513, KTHD3100C, KTK7132E, KTS1C1S250, IRF2807, KU310N10F, KU3600N10W, KUK108-50DL, KUK109-50DL, KUK110-50GL, KUK114-50L, KUK128-50DL, KUK129-50DL

Keywords - KTS3C3F30L MOSFET specs

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