All MOSFET. KU3600N10W Datasheet

 

KU3600N10W Datasheet and Replacement


   Type Designator: KU3600N10W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-223
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KU3600N10W Datasheet (PDF)

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KU3600N10W

KU3600N10WSEMICONDUCTORN CHANNEL TRENCH MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.FEATURES VDSS(Min.)= 100V, ID= 1.7ADrain-Source ON Resistan

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - KU3600N10W MOSFET datasheet

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