KU3600N10W Specs and Replacement

Type Designator: KU3600N10W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT-223

KU3600N10W substitution

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KU3600N10W datasheet

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KU3600N10W

KU3600N10W SEMICONDUCTOR N CHANNEL TRENCH MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistan... See More ⇒

Detailed specifications: KTD2005, KTD2017, KTHC5513, KTHD3100C, KTK7132E, KTS1C1S250, KTS3C3F30L, KU310N10F, IRFZ24N, KUK108-50DL, KUK109-50DL, KUK110-50GL, KUK114-50L, KUK128-50DL, KUK129-50DL, KUK130-50DL, KUK7105-40AIE

Keywords - KU3600N10W MOSFET specs

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