All MOSFET. PHB69N03LT Datasheet

 

PHB69N03LT Datasheet and Replacement


   Type Designator: PHB69N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT404
 

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PHB69N03LT Datasheet (PDF)

 ..1. Size:111K  philips
 phb69n03lt phd69n03lt php69n03lt 7.pdf pdf_icon

PHB69N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V)gRDS(ON) 14 m (VGS

 6.1. Size:53K  philips
 phb69n03t 1.pdf pdf_icon

PHB69N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB69N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 69 Atrench technology. The devic

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History: PHB60N06LT

Keywords - PHB69N03LT MOSFET datasheet

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