PHB69N03LT Specs and Replacement

Type Designator: PHB69N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT404

PHB69N03LT substitution

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PHB69N03LT datasheet

 ..1. Size:111K  philips
 phb69n03lt phd69n03lt php69n03lt 7.pdf pdf_icon

PHB69N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V) g RDS(ON) 14 m (VGS... See More ⇒

 6.1. Size:53K  philips
 phb69n03t 1.pdf pdf_icon

PHB69N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB69N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 69 A trench technology. The devic... See More ⇒

Detailed specifications: PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, PHB65N06LT, 4435, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E

Keywords - PHB69N03LT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.