KW306 Specs and Replacement

Type Designator: KW306

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOP-8

KW306 substitution

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KW306 datasheet

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KW306

SMD Type IC SMD Type IC N-Channel Silicon MOSFET High Speed Switching KW306 Features High density mounting is possible because of the complex type which holds low-on-resistance,very-high-speed-switching and 4-volt-drive N-/P-channel/ MOSFETS Low ON-state resistance 1 Source1 5 Drain2 2 Gate1 6 Drain2 3 Source2 7 Drain1 4 Gate2 8 Drain1 Absolute Maximum Ratings Ta = 25 Pa... See More ⇒

Detailed specifications: KUK7606-75B, KUK7607-30B, KUK7607-55B, KUP75N08, KVN4424Z, KVN4525E6, KVN4525Z, KVP4424Z, IRF3205, KX020N06, KX7N10L, KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, L1N60I

Keywords - KW306 MOSFET specs

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