KW306 MOSFET. Datasheet pdf. Equivalent
Type Designator: KW306
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOP-8
KW306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KW306 Datasheet (PDF)
kw306.pdf
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SMD Type ICSMD Type ICN-Channel Silicon MOSFET High Speed SwitchingKW306FeaturesHigh density mounting is possible because of the complex typewhich holds low-on-resistance,very-high-speed-switchingand 4-volt-drive N-/P-channel/ MOSFETSLow ON-state resistance1 : Source1 5: Drain22: Gate1 6: Drain23 : Source2 7: Drain14: Gate2 8: Drain1Absolute Maximum Ratings Ta = 25Pa
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .