KX020N06 Datasheet and Replacement
Type Designator: KX020N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT-89
KX020N06 substitution
KX020N06 Datasheet (PDF)
kx020n06.pdf

MOSFETe ICSMD TypeSMDType ICDIP Type ICSMDType MOSFETDIP Type MOSFETSMD TypeSMD TypeProduct specification KX020N06 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 200m (V = 10V)DS(ON) GS R 280m (V = 4.5V)DS(ON) GS R RDS
Datasheet: KUK7607-30B , KUK7607-55B , KUP75N08 , KVN4424Z , KVN4525E6 , KVN4525Z , KVP4424Z , KW306 , IRF740 , KX7N10L , KXP20N15 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , L1N60I , L2N60D .
History: AP9974
Keywords - KX020N06 MOSFET datasheet
KX020N06 cross reference
KX020N06 equivalent finder
KX020N06 lookup
KX020N06 substitution
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History: AP9974



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