KX020N06 Specs and Replacement

Type Designator: KX020N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT-89

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KX020N06 datasheet

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KX020N06

MOSFET e IC SMD Type SMDType IC DIP Type IC SMDType MOSFET DIP Type MOSFET SMD Type SMD Type Product specification KX020N06 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 200m (V = 10V) DS(ON) GS R 280m (V = 4.5V) DS(ON) GS R RDS... See More ⇒

Detailed specifications: KUK7607-30B, KUK7607-55B, KUP75N08, KVN4424Z, KVN4525E6, KVN4525Z, KVP4424Z, KW306, IRF740, KX7N10L, KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, L1N60I, L2N60D

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