KX7N10L Specs and Replacement

Type Designator: KX7N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT-223

KX7N10L substitution

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KX7N10L datasheet

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KX7N10L

SMDType MOSFET DIP Type MOSFET SMDType MOSFET DIP Type MOSFET SMD Type IC SMD Type IC Product specification KX7N10L SOT-223 Unit mm Features 3.50+0.2 6.50+0.2 -0.2 -0.2 VDS (V) = 100V ID = 1.7 A (VGS = 10V) 0.90+0.2 -0.2 350m (V = 10V), I =0.85A DS(ON) GS D +0.1 R 3.00-0.1 7.00+0.3 -0.3 380m (V = 5V), I =0.85A DS(ON) GS D R 4 ... See More ⇒

Detailed specifications: KUK7607-55B, KUP75N08, KVN4424Z, KVN4525E6, KVN4525Z, KVP4424Z, KW306, KX020N06, IRF840, KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, L1N60I, L2N60D, L2N60F

Keywords - KX7N10L MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.