All MOSFET. KX7N10L Datasheet

 

KX7N10L Datasheet and Replacement


   Type Designator: KX7N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-223
 

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KX7N10L Datasheet (PDF)

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KX7N10L

SMDType MOSFETDIP Type MOSFETSMDType MOSFETDIP Type MOSFETSMD Type ICSMD Type ICProduct specificationKX7N10LSOT-223Unit: mm Features3.50+0.26.50+0.2 -0.2-0.2 VDS (V) = 100V ID = 1.7 A (VGS = 10V)0.90+0.2-0.2 350m (V = 10V), I =0.85ADS(ON) GS D +0.1 R 3.00-0.17.00+0.3-0.3 380m (V = 5V), I =0.85ADS(ON) GS D R 4

Datasheet: KUK7607-55B , KUP75N08 , KVN4424Z , KVN4525E6 , KVN4525Z , KVP4424Z , KW306 , KX020N06 , IRF840 , KXP20N15 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , L1N60I , L2N60D , L2N60F .

History: PH7030AL | BL4N150-B | NCE65N330K | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I

Keywords - KX7N10L MOSFET datasheet

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