All MOSFET. KX7N10L Datasheet

 

KX7N10L MOSFET. Datasheet pdf. Equivalent


   Type Designator: KX7N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-223

 KX7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KX7N10L Datasheet (PDF)

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 kx7n10l.pdf

KX7N10L KX7N10L

SMDType MOSFETDIP Type MOSFETSMDType MOSFETDIP Type MOSFETSMD Type ICSMD Type ICProduct specificationKX7N10LSOT-223Unit: mm Features3.50+0.26.50+0.2 -0.2-0.2 VDS (V) = 100V ID = 1.7 A (VGS = 10V)0.90+0.2-0.2 350m (V = 10V), I =0.85ADS(ON) GS D +0.1 R 3.00-0.17.00+0.3-0.3 380m (V = 5V), I =0.85ADS(ON) GS D R 4

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