KXP20N15 Datasheet and Replacement
Type Designator: KXP20N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 332 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO-220
KXP20N15 substitution
KXP20N15 Datasheet (PDF)
kxp20n15.pdf

MOSFETe ICSMD TypeSMD pe MOSFETDIP pe MOSFETSMD Type MOSFETDIP Type MOSFETSMDType CDIPTyType CSMDType IICDIPTyType IICSMDTypeSMDTypeProduct specificationKXP20N15 Features VDS (V) = 150V RDS(ON) 0.13 (VGS = 10V)1 Gate2 Drain3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V
Datasheet: KUP75N08 , KVN4424Z , KVN4525E6 , KVN4525Z , KVP4424Z , KW306 , KX020N06 , KX7N10L , IRF840 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , L1N60I , L2N60D , L2N60F , L2N60I .
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