KXP20N15 MOSFET. Datasheet pdf. Equivalent
Type Designator: KXP20N15
Marking Code: 20N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39.1 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 332 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO-220
KXP20N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KXP20N15 Datasheet (PDF)
kxp20n15.pdf
MOSFETe ICSMD TypeSMD pe MOSFETDIP pe MOSFETSMD Type MOSFETDIP Type MOSFETSMDType CDIPTyType CSMDType IICDIPTyType IICSMDTypeSMDTypeProduct specificationKXP20N15 Features VDS (V) = 150V RDS(ON) 0.13 (VGS = 10V)1 Gate2 Drain3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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