KXU05N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: KXU05N25
Marking Code: 5N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.2 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-252
KXU05N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KXU05N25 Datasheet (PDF)
kxu05n25.pdf
SMD Type MOSFETN-Channel MOSFETKXU05N25 FeaturesTO-252 VDS (V) = 250VUnit: mm6.50+0.15 2.30+0.1-0.15 RDS(ON) 1 (VGS = 10V) -0.1+0.2 +0.85.30-0.2 0.50-0.70.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.1+0.151. Gate4.60-0.152. Drain3. Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDSS 250
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDG6335N
History: FDG6335N
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