KXU05N25 Specs and Replacement

Type Designator: KXU05N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-252

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KXU05N25 datasheet

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KXU05N25

SMD Type MOSFET N-Channel MOSFET KXU05N25 Features TO-252 VDS (V) = 250V Unit mm 6.50+0.15 2.30+0.1 -0.15 RDS(ON) 1 (VGS = 10V) -0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 +0.15 1. Gate 4.60-0.15 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDSS 250... See More ⇒

Detailed specifications: KVN4525E6, KVN4525Z, KVP4424Z, KW306, KX020N06, KX7N10L, KXP20N15, KXU03N25, IRF540, L1N60A, L1N60F, L1N60I, L2N60D, L2N60F, L2N60I, L2N60P, L2N7002DMT1G

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