LDN9926ET1G Specs and Replacement

Type Designator: LDN9926ET1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOP-8

LDN9926ET1G substitution

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LDN9926ET1G datasheet

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LDN9926ET1G

LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 29m @VGS = 4.5V. . RDS(ON) = 42m @VGS = 2.5V. N) Super high dense cell design for extremely low RDS(O High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 8 7 6 5 7 6 5 8 9926 4 1 2 3 1 2 3 4 ... See More ⇒

Detailed specifications: L2N60I, L2N60P, L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G, L2SK3018WT1G, L2SK3019LT1G, AON6414A, LDP9933ET1G, LF2802A, LF2805A, LJ2015-53, LN100, LND01, LND150K1, LND150N3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.