LDN9926ET1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LDN9926ET1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOP-8
LDN9926ET1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LDN9926ET1G Datasheet (PDF)
ldn9926et1g.pdf
LESHAN RADIO COMPANY, LTD.LDN9926ET1GDual N Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 29m @VGS = 4.5V.. RDS(ON) = 42m @VGS = 2.5V. N)Super high dense cell design for extremely low RDS(OHigh power and current handing capability.Lead free product is acquired.Surface mount Package.D1 D1 D2 D28 7 6 57 6 58992641 2 31 2 3 4
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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