All MOSFET. LDN9926ET1G Datasheet

 

LDN9926ET1G Datasheet and Replacement


   Type Designator: LDN9926ET1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOP-8
 

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LDN9926ET1G Datasheet (PDF)

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LDN9926ET1G

LESHAN RADIO COMPANY, LTD.LDN9926ET1GDual N Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 29m @VGS = 4.5V.. RDS(ON) = 42m @VGS = 2.5V. N)Super high dense cell design for extremely low RDS(OHigh power and current handing capability.Lead free product is acquired.Surface mount Package.D1 D1 D2 D28 7 6 57 6 58992641 2 31 2 3 4

Datasheet: L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , IRFB4110 , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 .

History: HGN036N08SL | IXTH6N150 | ELM14430AA | RJK0629DPE | MIC94050BM4TR | CED06N7 | SFF50N20N

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