All MOSFET. LDP9933ET1G Datasheet

 

LDP9933ET1G Datasheet and Replacement


   Type Designator: LDP9933ET1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP-8
 

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LDP9933ET1G Datasheet (PDF)

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LDP9933ET1G

LESHAN RADIO COMPANY, LTD.LDP9933ET1GDual P-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.06 @ VGS = -4.5 V-4.7-20-200.10 @ VGS = -2.5 V -3.7S1 S2D2 D2 D1 D17 6 58G1 G2993341 2 3SOP-8 top view D1 D2G2S2 S1 G1P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10 secs Ste

Datasheet: L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , IRFP250N , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 , LND150N8 .

History: SIR474DP | PSMN3R9-60XS | SI2310A | MPSH70M290 | PJW7N06A | PNMTO600V5 | SI2101

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