LDP9933ET1G Specs and Replacement

Type Designator: LDP9933ET1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8

LDP9933ET1G substitution

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LDP9933ET1G datasheet

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LDP9933ET1G

LESHAN RADIO COMPANY, LTD. LDP9933ET1G Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.06 @ VGS = -4.5 V -4.7 -20 -20 0.10 @ VGS = -2.5 V -3.7 S1 S2 D2 D2 D1 D1 7 6 5 8 G1 G2 9933 4 1 2 3 SOP-8 top view D1 D2 G2 S2 S1 G1 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Ste... See More ⇒

Detailed specifications: L2N60P, L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G, L2SK3018WT1G, L2SK3019LT1G, LDN9926ET1G, IRFB4115, LF2802A, LF2805A, LJ2015-53, LN100, LND01, LND150K1, LND150N3, LND150N8

Keywords - LDP9933ET1G MOSFET specs

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