All MOSFET. LF2805A Datasheet

 

LF2805A Datasheet and Replacement


   Type Designator: LF2805A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 14.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12.5 Ohm
   Package: SOT-443A
 

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LF2805A Datasheet (PDF)

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LF2805A

LF2805A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 5W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT

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LF2805A

LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT

Datasheet: L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , P55NF06 , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G .

History: KMB5D0NP40Q | SI4N60L-TA3-T | 2SK3107C | AOD450 | KMB6D6N30Q | SID9435 | KF3N40W

Keywords - LF2805A MOSFET datasheet

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