LN100 Datasheet and Replacement
Type Designator: LN100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 0.003 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3000 Ohm
Package: LFGA
LN100 substitution
LN100 Datasheet (PDF)
ln100.pdf

Supertex inc. LN1001200V CascodedN-Channel MOSFETFeatures General DescriptionThe LN100 is a 1200V cascoded N-channel MOSFET 1200V breakdown voltagewith an integrated high value high voltage resistor divider. Low threshold, 1.6V max.Multiple devices can be used in series for voltages High input impedancegreater than 1200V. A resistor divider ratio of 1000:1 is
Datasheet: L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , STP75NF75 , LND01 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G .
History: SI2101 | PSMN3R9-60XS | MPSH70M290 | PNMTO600V5
Keywords - LN100 MOSFET datasheet
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History: SI2101 | PSMN3R9-60XS | MPSH70M290 | PNMTO600V5



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