LND01 Datasheet and Replacement
Type Designator: LND01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 9 V
|Id| ⓘ - Maximum Drain Current: 0.33 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT-23-5
LND01 substitution
LND01 Datasheet (PDF)
lnd01.pdf

Supertex inc. LND01Lateral N-ChannelDepletion-Mode MOSFETFeatures General Description Bi-directional The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Low on-resistanceSupertexs well-proven silicon-gate manufacturing process. Low input capacitanceThis combination produces a device with the power
Datasheet: L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , STP75NF75 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG .
History: AM2358NE | AP96T07AGP-HF | AFP2379 | HFI5N50S | TPCS8211 | PHP3055L | AFN4900W
Keywords - LND01 MOSFET datasheet
LND01 cross reference
LND01 equivalent finder
LND01 lookup
LND01 substitution
LND01 replacement
History: AM2358NE | AP96T07AGP-HF | AFP2379 | HFI5N50S | TPCS8211 | PHP3055L | AFN4900W



LIST
Last Update
MOSFET: APJ14N65T | APJ14N65P | APJ14N65F | APJ14N65D | APN9N50D | AP65R190 | APJ50N65T | APJ50N65P | APJ50N65F | APJ30N65T | APJ30N65P | APJ30N65F | AP65R650 | APG60N10S | APG120N04NF | AP8G06S
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
ac127 transistor | a42 transistor | bc547c | 2sa726 | 2sd313 | 2sc536 | d718 transistor | irfp250n datasheet