All MOSFET. LND01 Datasheet

 

LND01 Datasheet and Replacement


   Type Designator: LND01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 9 V
   |Id| ⓘ - Maximum Drain Current: 0.33 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT-23-5
 

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LND01 Datasheet (PDF)

 ..1. Size:458K  supertex
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LND01

Supertex inc. LND01Lateral N-ChannelDepletion-Mode MOSFETFeatures General Description Bi-directional The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Low on-resistanceSupertexs well-proven silicon-gate manufacturing process. Low input capacitanceThis combination produces a device with the power

Datasheet: L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , AON7408 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG .

History: IPD85P04P4L-06 | NTF3055-160T1

Keywords - LND01 MOSFET datasheet

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