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LND01 Specs and Replacement

Type Designator: LND01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 9 V

|Id| ⓘ - Maximum Drain Current: 0.33 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT-23-5

LND01 substitution

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LND01 datasheet

 ..1. Size:458K  supertex
 lnd01.pdf pdf_icon

LND01

Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET Features General Description Bi-directional The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Low on-resistance Supertex s well-proven silicon-gate manufacturing process. Low input capacitance This combination produces a device with the power... See More ⇒

Detailed specifications: L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , IRFP250N , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG .

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