LND01 Datasheet and Replacement
Type Designator: LND01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 9 V
|Id| ⓘ - Maximum Drain Current: 0.33 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT-23-5
LND01 substitution
LND01 Datasheet (PDF)
lnd01.pdf

Supertex inc. LND01Lateral N-ChannelDepletion-Mode MOSFETFeatures General Description Bi-directional The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Low on-resistanceSupertexs well-proven silicon-gate manufacturing process. Low input capacitanceThis combination produces a device with the power
Datasheet: L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , STP75NF75 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG .
History: AP95T10AGW-HF | NCE65T360 | AOT380A60L | 2SK4047-01S | UT7317 | CS2N60 | IPL60R085P7
Keywords - LND01 MOSFET datasheet
LND01 cross reference
LND01 equivalent finder
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History: AP95T10AGW-HF | NCE65T360 | AOT380A60L | 2SK4047-01S | UT7317 | CS2N60 | IPL60R085P7



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