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LND150N3 Specs and Replacement

Type Designator: LND150N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 450 nS

Cossⓘ - Output Capacitance: 2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm

Package: TO-92

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LND150N3 datasheet

 8.1. Size:621K  supertex
 lnd150.pdf pdf_icon

LND150N3

LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertex s lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1... See More ⇒

Detailed specifications: LDN9926ET1G, LDP9933ET1G, LF2802A, LF2805A, LJ2015-53, LN100, LND01, LND150K1, IRF9540, LND150N8, LNTA4001NT1G, LNTA7002NT1G, LNTR4003NLT1G, LO4459PT1G, LP0701LG, LP0701N3, LP2301ALT1G

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