All MOSFET. LND150N3 Datasheet

 

LND150N3 Datasheet and Replacement


   Type Designator: LND150N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: TO-92
 

 LND150N3 substitution

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LND150N3 Datasheet (PDF)

 8.1. Size:621K  supertex
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LND150N3

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1

Datasheet: LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , K3569 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , LP0701N3 , LP2301ALT1G .

History: DH8004B | 4N100L-TF1-T | IPN50R3K0CE | IPN50R1K4CE | BLM06N10-P | IPD70R600P7S | SI1012

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