LND150N8 Datasheet and Replacement

   Type Designator: LND150N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: SOT-89
      - MOSFET Cross-Reference Search