LND150N8 Datasheet and Replacement
Type Designator: LND150N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
Package: SOT-89
LND150N8 substitution
LND150N8 Datasheet (PDF)
lnd150.pdf

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1
Datasheet: LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 , 2N7000 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , LP0701N3 , LP2301ALT1G , LP2301LT1G .
History: MTN7002S3
Keywords - LND150N8 MOSFET datasheet
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LND150N8 equivalent finder
LND150N8 lookup
LND150N8 substitution
LND150N8 replacement
History: MTN7002S3



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