LND150N8 PDF and Equivalents Search

 

LND150N8 Specs and Replacement


   Type Designator: LND150N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: SOT-89
 

 LND150N8 substitution

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LND150N8 datasheet

 8.1. Size:621K  supertex
 lnd150.pdf pdf_icon

LND150N8

LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertex s lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1... See More ⇒

Detailed specifications: LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 , AON7408 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , LP0701N3 , LP2301ALT1G , LP2301LT1G .

History: NTMFS4835N | NTD20N06LT4G | MXP1007AT | DMC25D1UVT | 2SK2827-01 | IXTU4N60P | IRFB16N50K

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