LNTA4001NT1G Specs and Replacement
Type Designator: LNTA4001NT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.238 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SC-89
LNTA4001NT1G substitution
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LNTA4001NT1G datasheet
lnta4001nt1g.pdf
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection 3 Features Low Gate Charge for Fast Switching 1 Small 1.6 x 1.6 mm Footprint 2 ESD Protected Gate SC-89 Pb-Free Package is Available Applications Power Management Load Switch Level Shift V(BR)DSS RDS(on) ID MAX Typ @ VGS (Note 1) Portabl... See More ⇒
lnta4001nt1g s-lnta4001nt1g.pdf
LESHAN RADIO COMPANY, LTD. LNTA4001NT1G Small Signal MOSFET S-LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available SC-89 ESD Protected 2000V ESD Protected 1500V S- Prefix for Automotive and Other Applications Requiring ESD ... See More ⇒
Detailed specifications: LF2802A, LF2805A, LJ2015-53, LN100, LND01, LND150K1, LND150N3, LND150N8, 2SK3878, LNTA7002NT1G, LNTR4003NLT1G, LO4459PT1G, LP0701LG, LP0701N3, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G
Keywords - LNTA4001NT1G MOSFET specs
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