LNTA4001NT1G Datasheet and Replacement
Type Designator: LNTA4001NT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.238 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SC-89
LNTA4001NT1G substitution
LNTA4001NT1G Datasheet (PDF)
lnta4001nt1g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD Protection3Features Low Gate Charge for Fast Switching1 Small 1.6 x 1.6 mm Footprint2 ESD Protected GateSC-89 Pb-Free Package is AvailableApplications Power Management Load Switch Level ShiftV(BR)DSS RDS(on) ID MAXTyp @ VGS (Note 1) Portabl
lnta4001nt1g s-lnta4001nt1g.pdf

LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD
Datasheet: LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 , LND150N3 , LND150N8 , IRFP260 , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , LP0701N3 , LP2301ALT1G , LP2301LT1G , LP2305DSLT1G .
History: CEU16N10 | SI1031R | BSO330N02KG | AFP1433 | DAMH300N150 | IXFK200N10P | SPC65R90G
Keywords - LNTA4001NT1G MOSFET datasheet
LNTA4001NT1G cross reference
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History: CEU16N10 | SI1031R | BSO330N02KG | AFP1433 | DAMH300N150 | IXFK200N10P | SPC65R90G



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