LNTR4003NLT1G PDF and Equivalents Search

 

LNTR4003NLT1G Specs and Replacement

Type Designator: LNTR4003NLT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47.9 nS

Cossⓘ - Output Capacitance: 19.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-23

LNTR4003NLT1G substitution

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LNTR4003NLT1G datasheet

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LNTR4003NLT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N-Channel, Gate ESD Protection, SOT-23 LNTR4003NLT1G Features 3 Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate 1 Minimum Breakdown Voltage Rating of 30 V 2 We declare that the material of product is ROHS compliant an... See More ⇒

Detailed specifications: LJ2015-53, LN100, LND01, LND150K1, LND150N3, LND150N8, LNTA4001NT1G, LNTA7002NT1G, 2N7002, LO4459PT1G, LP0701LG, LP0701N3, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G

Keywords - LNTR4003NLT1G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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