All MOSFET. LNTR4003NLT1G Datasheet

 

LNTR4003NLT1G Datasheet and Replacement


   Type Designator: LNTR4003NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47.9 nS
   Cossⓘ - Output Capacitance: 19.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-23
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LNTR4003NLT1G Datasheet (PDF)

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LNTR4003NLT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET30 V, 0.56 A, Single, N-Channel, GateESD Protection, SOT-23LNTR4003NLT1GFeatures3 Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate1 Minimum Breakdown Voltage Rating of 30 V2 We declare that the material of product is ROHS compliant an

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History: VBNC1303 | IRFS4010PBF

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