All MOSFET. LO4459PT1G Datasheet

 

LO4459PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LO4459PT1G
   Marking Code: 4459
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.7 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOP-8

 LO4459PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LO4459PT1G Datasheet (PDF)

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 lo4459pt1g.pdf

LO4459PT1G LO4459PT1G

LESHAN RADIO COMPANY, LTD.LO4459PT1GP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe LO4459PT1G uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON) with low gate charge. This device is suitable ID = -6.5Afor use as a load switch or in PWM applications. RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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