LO4459PT1G Specs and Replacement
Type Designator: LO4459PT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOP-8
LO4459PT1G substitution
- MOSFET ⓘ Cross-Reference Search
LO4459PT1G datasheet
lo4459pt1g.pdf
LESHAN RADIO COMPANY, LTD. LO4459PT1G P-Channel Enhancement Mode Field Effect Transistor General Description Features The LO4459PT1G uses advanced trench technology to provide VDS (V) = -30V excellent RDS(ON) with low gate charge. This device is suitable ID = -6.5A for use as a load switch or in PWM applications. RDS(ON) ... See More ⇒
Detailed specifications: LN100, LND01, LND150K1, LND150N3, LND150N8, LNTA4001NT1G, LNTA7002NT1G, LNTR4003NLT1G, IRF9540N, LP0701LG, LP0701N3, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G
Keywords - LO4459PT1G MOSFET specs
LO4459PT1G cross reference
LO4459PT1G equivalent finder
LO4459PT1G pdf lookup
LO4459PT1G substitution
LO4459PT1G replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E
Popular searches
irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815 | bu406 | j201 datasheet | 2n5088 datasheet