All MOSFET. LP0701N3 Datasheet

 

LP0701N3 Datasheet and Replacement


   Type Designator: LP0701N3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-92
 

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LP0701N3 Datasheet (PDF)

 8.1. Size:569K  supertex
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LP0701N3

Supertex inc.LP0701P-Channel Enhancement-Mode Lateral MOSFETFeatures General DescriptionThese enhancement-mode (normally-off) transistors utilize a Ultra-low thresholdlateral MOS structure and Supertexs well-proven silicon-gate High input impedancemanufacturing process. This combination produces devices Low input capacitancewith the power handling capabiliti

Datasheet: LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , 5N60 , LP2301ALT1G , LP2301LT1G , LP2305DSLT1G , LP2305LT1G , LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G .

History: SIB411DK

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