LP0701N3 Datasheet and Replacement
Type Designator: LP0701N3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-92
LP0701N3 substitution
LP0701N3 Datasheet (PDF)
lp0701.pdf

Supertex inc.LP0701P-Channel Enhancement-Mode Lateral MOSFETFeatures General DescriptionThese enhancement-mode (normally-off) transistors utilize a Ultra-low thresholdlateral MOS structure and Supertexs well-proven silicon-gate High input impedancemanufacturing process. This combination produces devices Low input capacitancewith the power handling capabiliti
Datasheet: LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , IRLB4132 , LP2301ALT1G , LP2301LT1G , LP2305DSLT1G , LP2305LT1G , LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G .
History: LP2307LT1G
Keywords - LP0701N3 MOSFET datasheet
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History: LP2307LT1G



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