LP0701N3 PDF and Equivalents Search

 

LP0701N3 Specs and Replacement

Type Designator: LP0701N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-92

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LP0701N3 datasheet

 8.1. Size:569K  supertex
 lp0701.pdf pdf_icon

LP0701N3

Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode (normally-off) transistors utilize a Ultra-low threshold lateral MOS structure and Supertex s well-proven silicon-gate High input impedance manufacturing process. This combination produces devices Low input capacitance with the power handling capabiliti... See More ⇒

Detailed specifications: LND150K1, LND150N3, LND150N8, LNTA4001NT1G, LNTA7002NT1G, LNTR4003NLT1G, LO4459PT1G, LP0701LG, IRLB4132, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G

Keywords - LP0701N3 MOSFET specs

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