LP3401LT1G Datasheet and Replacement
Type Designator: LP3401LT1G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT-23
LP3401LT1G substitution
LP3401LT1G Datasheet (PDF)
lp3401lt1g.pdf
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)
lp3407lt1g.pdf
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)
lp3407lt1g s-lp3407lt1g.pdf
LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)
Datasheet: LO4459PT1G , LP0701LG , LP0701N3 , LP2301ALT1G , LP2301LT1G , LP2305DSLT1G , LP2305LT1G , LP2307LT1G , IRF9540N , LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 .
History: APT66M60B2 | BF1204 | NCE0208KA | ELM33404CA | IRLML2502G | FCP165N65S3R0 | LP3407LT1G
Keywords - LP3401LT1G MOSFET datasheet
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History: APT66M60B2 | BF1204 | NCE0208KA | ELM33404CA | IRLML2502G | FCP165N65S3R0 | LP3407LT1G
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