LP3401LT1G PDF and Equivalents Search

 

LP3401LT1G Specs and Replacement

Type Designator: LP3401LT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT-23

LP3401LT1G substitution

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LP3401LT1G datasheet

 ..1. Size:646K  lrc
 lp3401lt1g.pdf pdf_icon

LP3401LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance. 3 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 1 FEATURES 2 2)RDS(ON) ... See More ⇒

 9.1. Size:437K  lrc
 lp3407lt1g.pdf pdf_icon

LP3401LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3407LT1G VDS -30V 3 ID (VGS = -10V) -4.1A RDS(ON) (VGS = -10V) ... See More ⇒

 9.2. Size:997K  lrc
 lp3407lt1g s-lp3407lt1g.pdf pdf_icon

LP3401LT1G

LESHAN RADIO COMPANY, LTD. LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET S-LP3407LT1G VDS -30V 3 ID (VGS = -10V) -4.1A RDS(ON) (VGS = -10V) ... See More ⇒

Detailed specifications: LO4459PT1G, LP0701LG, LP0701N3, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, SKD502T, LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, LS166

Keywords - LP3401LT1G MOSFET specs

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