All MOSFET. LP3407LT1G Datasheet

 

LP3407LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP3407LT1G
   Marking Code: A07
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23

 LP3407LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LP3407LT1G Datasheet (PDF)

 ..1. Size:437K  lrc
 lp3407lt1g.pdf

LP3407LT1G LP3407LT1G

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

 ..2. Size:997K  lrc
 lp3407lt1g s-lp3407lt1g.pdf

LP3407LT1G LP3407LT1G

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

 9.1. Size:646K  lrc
 lp3401lt1g.pdf

LP3407LT1G LP3407LT1G

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)

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History: STF25N80K5 | IXTY2N100P | HGB115N15S

 

 
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