All MOSFET. LP3407LT1G Datasheet

 

LP3407LT1G Datasheet and Replacement


   Type Designator: LP3407LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23
 

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LP3407LT1G Datasheet (PDF)

 ..1. Size:437K  lrc
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LP3407LT1G

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

 ..2. Size:997K  lrc
 lp3407lt1g s-lp3407lt1g.pdf pdf_icon

LP3407LT1G

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

 9.1. Size:646K  lrc
 lp3401lt1g.pdf pdf_icon

LP3407LT1G

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)

Datasheet: LP0701LG , LP0701N3 , LP2301ALT1G , LP2301LT1G , LP2305DSLT1G , LP2305LT1G , LP2307LT1G , LP3401LT1G , IRFB3607 , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , LS370 .

History: CTLM7110-M832D | KUK129-50DL

Keywords - LP3407LT1G MOSFET datasheet

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