LP3407LT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LP3407LT1G
Marking Code: A07
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.2 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT-23
LP3407LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LP3407LT1G Datasheet (PDF)
lp3407lt1g.pdf
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)
lp3407lt1g s-lp3407lt1g.pdf
LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)
lp3401lt1g.pdf
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)
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