All MOSFET. LP3443LT1G Datasheet

 

LP3443LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP3443LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

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LP3443LT1G Datasheet (PDF)

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 lp3443lt1g.pdf

LP3443LT1G LP3443LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3443LT1GV = -20V DSR Vgs@-4.5V, Ids@-4.7A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1003Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (TO236AB)compliance with RoHS requirements.3

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