LP3443LT1G PDF and Equivalents Search

 

LP3443LT1G Specs and Replacement

Type Designator: LP3443LT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23

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LP3443LT1G datasheet

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LP3443LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3443LT1G V = -20V DS R Vgs@-4.5V, Ids@-4.7A = 60 m DS(ON), m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT 23 (TO 236AB) compliance with RoHS requirements. 3 ... See More ⇒

Detailed specifications: LP0701N3, LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, 13N50, LP4101LT1G, LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, LS166, LS370, LS371

Keywords - LP3443LT1G MOSFET specs

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