All MOSFET. LP4101LT1G Datasheet

 

LP4101LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP4101LT1G
   Marking Code: P41
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.23 nC
   trⓘ - Rise Time: 3.73 nS
   Cossⓘ - Output Capacitance: 145.54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23

 LP4101LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LP4101LT1G Datasheet (PDF)

 ..1. Size:766K  lrc
 lp4101lt1g.pdf

LP4101LT1G LP4101LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP4101LT1GV = -20V DSR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 1503Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2Fully Characterized Avalanche Voltage and Current SOT 23 (TO236AB)Improved Shoot-Through FOM

 ..2. Size:1030K  lrc
 lp4101lt1g s-lp4101lt1g.pdf

LP4101LT1G LP4101LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET V = -20V DSLP4101LT1GR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), S-LP4101LT1GmRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 2we declar

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top