LP4101LT1G PDF and Equivalents Search

 

LP4101LT1G Specs and Replacement

Type Designator: LP4101LT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.73 nS

Cossⓘ - Output Capacitance: 145.54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23

LP4101LT1G substitution

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LP4101LT1G datasheet

 ..1. Size:766K  lrc
 lp4101lt1g.pdf pdf_icon

LP4101LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G V = -20V DS R Vgs@-4.5V, Ids@-2.8A = 100 m DS(ON), m RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 Fully Characterized Avalanche Voltage and Current SOT 23 (TO 236AB) Improved Shoot-Through FOM ... See More ⇒

 ..2. Size:1030K  lrc
 lp4101lt1g s-lp4101lt1g.pdf pdf_icon

LP4101LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET V = -20V DS LP4101LT1G R Vgs@-4.5V, Ids@-2.8A = 100 m DS(ON), S-LP4101LT1G m RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1 Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 2 we declar... See More ⇒

Detailed specifications: LP2301ALT1G, LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G, AON7410, LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G

Keywords - LP4101LT1G MOSFET specs

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