All MOSFET. LP4101LT1G Datasheet

 

LP4101LT1G Datasheet and Replacement


   Type Designator: LP4101LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.73 nS
   Cossⓘ - Output Capacitance: 145.54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23
 

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LP4101LT1G Datasheet (PDF)

 ..1. Size:766K  lrc
 lp4101lt1g.pdf pdf_icon

LP4101LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP4101LT1GV = -20V DSR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 1503Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2Fully Characterized Avalanche Voltage and Current SOT 23 (TO236AB)Improved Shoot-Through FOM

 ..2. Size:1030K  lrc
 lp4101lt1g s-lp4101lt1g.pdf pdf_icon

LP4101LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET V = -20V DSLP4101LT1GR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), S-LP4101LT1GmRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 2we declar

Datasheet: LP2301ALT1G , LP2301LT1G , LP2305DSLT1G , LP2305LT1G , LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G , RFP50N06 , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , LSI1012XT1G .

History: STD38NH02L-1 | SPP03N60C3 | FQD9N25TM | CJQ4406 | TSM2312CX | 2N7002NXBK | NP88N075DUE

Keywords - LP4101LT1G MOSFET datasheet

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