LP4411ET1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LP4411ET1G
Marking Code: 4411
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.4 nC
trⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOP-8
LP4411ET1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LP4411ET1G Datasheet (PDF)
..1. Size:288K lrc
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LESHAN RADIO COMPANY, LTD.LP4411ET1GP-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -30VID = -8 A (VGS = -10V)RDS(ON)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .