LP4411ET1G PDF and Equivalents Search

 

LP4411ET1G Specs and Replacement

Type Designator: LP4411ET1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOP-8

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LP4411ET1G datasheet

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LP4411ET1G

LESHAN RADIO COMPANY, LTD. LP4411ET1G P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) ... See More ⇒

Detailed specifications: LP2301LT1G, LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G, LP4101LT1G, 12N60, LP9435LT1G, LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G

Keywords - LP4411ET1G MOSFET specs

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