LS370 Datasheet. Specs and Replacement

Type Designator: LS370  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 135 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT-143

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LS370 datasheet

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LS370

3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE r 200 ds(on) LS370, 71 3N170, 71 FAST SWITCHING td(on) 3.0ns ABSOLUTE MAXIMUM RATINGS1 SOT-143 @ 25 C (unless otherwise stated) TOP VIEW Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperatu... See More ⇒

Detailed specifications: LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, LS166, 12N60, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N, NVA7002NT1G, NVB25P06

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