LS370 PDF and Equivalents Search

 

LS370 Specs and Replacement


   Type Designator: LS370
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 135 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT-143
 

 LS370 substitution

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LS370 datasheet

 ..1. Size:170K  linear-systems
 ls370 ls371.pdf pdf_icon

LS370

3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE r 200 ds(on) LS370, 71 3N170, 71 FAST SWITCHING td(on) 3.0ns ABSOLUTE MAXIMUM RATINGS1 SOT-143 @ 25 C (unless otherwise stated) TOP VIEW Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperatu... See More ⇒

Detailed specifications: LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , IRF530 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 .

History: IXTX200N10L2 | NTD20N06LT4G | MXP1007AT | IXTU4N60P | IRFB16N50K | HGD046NE6A | IXTY1N80

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