LS370 Datasheet and Replacement
Type Designator: LS370
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 135 °C
tr ⓘ - Rise Time: 10 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT-143
LS370 substitution
LS370 Datasheet (PDF)
ls370 ls371.pdf
3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE r 200 ds(on) LS370, 71 3N170, 71 FAST SWITCHING td(on) 3.0ns ABSOLUTE MAXIMUM RATINGS1 SOT-143 @ 25 C (unless otherwise stated) TOP VIEW Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperatu
Datasheet: LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , STP80NF70 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 .
History: HM2300C
Keywords - LS370 MOSFET datasheet
LS370 cross reference
LS370 equivalent finder
LS370 lookup
LS370 substitution
LS370 replacement
History: HM2300C
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