All MOSFET. LS370 Datasheet

 

LS370 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LS370
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 135 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT-143

 LS370 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LS370 Datasheet (PDF)

 ..1. Size:170K  linear-systems
 ls370 ls371.pdf

LS370 LS370

3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE r 200 ds(on) LS370, 71 3N170, 71 FAST SWITCHING td(on) 3.0ns ABSOLUTE MAXIMUM RATINGS1 SOT-143 @ 25 C (unless otherwise stated) TOP VIEW Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperatu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSD2504S | BUK7Y25-40B

 

 
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